李洪伟，男，1989年10月生，汉族，2019年6月毕业于中山大学，获理学博士学位，威尼斯wnsr888物理与电子科学学院副教授。主要从事自旋电子学与阻变存储器方面的研究。现主持省科技厅与教育厅科研项目三项，先后在Applied Physics Letters, Journal of Applied Physics, ACS Applied Materials＆Interfaces, Physics Letters A等期刊发表论文多篇
[代表性科研论文]
1.HongweiLi,ShuxiangWu,DanLi,GailiWang,PingHu,and ShuweiLi,Tailoring anomalous Hall effect by spin–orbit coupling in epitaxial Au/Fe4N bilayers,Applied Physics Letters,121, 262401 (2022)
2. Hongwei Li, Gaili Wang, Dan Li, Ping Hu, Wenqi Zhou, Xingyuan Ma, Shuai Dang, Songdan Kang, Tian Dai, Fengmei Yu, Xiang Zhou, Shuxiang Wu, and Shuwei Li, Spin-orbit torque-induced magnetization switching in epitaxial Au/Fe4N bilayer films,Applied Physics Letters, 114, 092402 (2019)
3. Hongwei Li, Gaili Wang, Dan Li, Ping Hu, Wenqi Zhou, Shuai Dang, Xingyuan Ma, Tian Dai, Songdan Kang, Fengmei Yu, Xiang Zhou, Shuxiang Wu, and Shuwei Li, Field-free deterministic magnetization switching with ultra-low current density in epitaxial Au/Fe4N bilayer films,ACS Applied Materials & Interfaces,11(18), 11965-11971(2019)
4. Hongwei Li, Gaili Wang, Ping Hu, Dan Li, Shuai Dang, Xingyuan Ma, Tian Dai, Songdan Kang, Fengmei Yu, Xiang Zhou, Shuxiang Wu, and Shuwei Li, Suppression of anomalous Hall effect by heavy-fermion in epitaxial antiperovskite Mn4-xGdxN films,Journal of Applied Physics, 124, 093903 (2018)
5. Hongwei Li, Shuxiang Wu, Ping Hu, Dan Li, Gaili Wang, and Shuwei Li, Light and magnetic field double modulation on the resistive switching behavior in BaTiO3/FeMn/BaTiO3trilayer films,Physics Letters A, 381, 2127–2130 (2017)
[联系方式]
E-mail:lihw1014@foxmail.com
通信地址：贵州省遵义市新蒲区平安大道威尼斯wnsr888执矩楼512
